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Electrical Characteristics of the IGBT T C
= 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV CES
? B VCES /
? T J
I CES
I GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0V, I C = 250uA
V GE = 0V, I C = 1mA
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/ ° C
uA
nA
On Characteristics
V GE(th)
G-E Threshold Voltage
I C = 20mA, V CE = V GE
3.5
4.5
6.5
V
V CE(sat)
Collector to Emitter
Saturation Voltage
I C = 20A ,
I C = 40A ,
V GE = 15V
V GE = 15V
--
--
2.1
2.6
2.6
--
V
V
Dynamic Characteristics
C ies
C oes
C res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V CE = 30V , V GE = 0V,
f = 1MHz
--
--
--
1430
170
50
--
--
--
pF
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
--
--
15
30
--
--
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
Q g
Q ge
Q gc
L e
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn - On Switching Loss
Turn - Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V CC = 300 V, I C = 20A,
R G = 10 ? , V GE = 15V,
Inductive Load, T C = 25 ° C
V CC = 300 V, I C = 20A,
R G = 10 ? , V GE = 15V ,
Inductive Load, T C = 125 ° C
V CE = 300 V, I C = 20A,
V GE = 15V
Measured 5mm from PKG
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
65
50
160
200
360
30
37
110
144
310
430
740
97
20
25
14
130
150
--
--
600
--
--
200
250
--
--
1200
150
30
40
--
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
Electrical Characteristics of DIODE T C
= 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V FM
t rr
I rr
Q rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
I F = 15A
I F = 15A,
di/dt = 200A/us
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T C = 100 ° C
--
--
--
--
--
--
--
--
1.4
1.3
42
74
4.5
6.5
80
220
1.7
--
60
--
6.0
--
180
--
V
ns
A
nC
?2002 Fairchild Semiconductor Corporation
SGH40N60UFD Rev. A1
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